Photoluminescence study of C60 doped polystyrene

We report here a new phenomenon in photoluminescence of C60 doped in polystyrene. Under 488 nm cw laser radiation, the PL intensity of the sample was found to increase with time. With 10 h of irradiation, the PL signal strength increased by 10 times, comparable to that from porous Si. The peak of th...

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Veröffentlicht in:Applied physics letters 1996-02, Vol.68 (7), p.943-945
Hauptverfasser: Zhang, Chun, Xiao, Xudong, Ge, Weikun, Loy, M. M. T., Dazhi, Wang, Qijin, Zhang, Jian, Zuo
Format: Artikel
Sprache:eng
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Zusammenfassung:We report here a new phenomenon in photoluminescence of C60 doped in polystyrene. Under 488 nm cw laser radiation, the PL intensity of the sample was found to increase with time. With 10 h of irradiation, the PL signal strength increased by 10 times, comparable to that from porous Si. The peak of the PL was found to shift to high frequency as well. More detailed studies showed that such an irreversible change of the sample might be a result of the lowering symmetry of oxidized C60 fullerene in the polystyrene.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116106