Large-area double-side pulsed laser deposition of YBa2Cu3O7− x thin films on 3-in. sapphire wafers

A pulsed laser deposition (PLD) technique for YBa2Cu3O7−x (YBCO) thin films with CeO2 buffer layers and gold contact films on both sides of 3-in. diameter sapphire wafers, which are applied for microwave strip-line filters, is described and some results of structural and compositional characterization are given. This large-area multilayer PLD technique allows for a homogeneous and reproducible YBCO deposition on both wafer sides with inductively measured critical current densities of 3×106–5×106 A/cm2 at 77 K with a YBCO thickness of 350–500 nm. The results indicate that PLD seems to have unique capabilities for fast deposition of high-quality large area oxide multilayers.