Dynamical switching behavior of n - i - p - i modulator structures

We report on the ac switching behavior of surface-normal electro-optical modulators based on hetero-n-i-p-i structures. We have investigated systematically the way the transition times scale with device dimensions and present a straightforward theoretical model including sheet resistivities of n and...

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Veröffentlicht in:Applied physics letters 1996-03, Vol.68 (13), p.1838-1840
Hauptverfasser: Pfeiffer, U., Kneissl, M., Knüpfer, B., Müller, N., Kiesel, P., Döhler, G. H., Smith, J. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the ac switching behavior of surface-normal electro-optical modulators based on hetero-n-i-p-i structures. We have investigated systematically the way the transition times scale with device dimensions and present a straightforward theoretical model including sheet resistivities of n and p layers as well as contact resistances. The model is in excellent agreement with experimental data. With a voltage swing as low as 3.7 V, we achieved a single path contrast ratio in excess of 2:1 and maximum 3 dB frequencies larger than 250 MHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116030