Low-temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Epitaxial Si films have been deposited at low substrate temperatures of 400 and 500 °C, by plasma enhanced chemical vapor deposition using an electron cyclotron resonance source. Samples were analyzed using Rutherford backscatter spectrometry, cross-sectional transmission electron microscopy, and x-...

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Veröffentlicht in:	Applied physics letters 1995-08, Vol.67 (7), p.971-973
Hauptverfasser:	Rogers, J. L., Andry, P. S., Varhue, W. J., McGaughnea, P., Adams, E., Kontra, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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