Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics

Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics

Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a dopin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1995-11, Vol.67 (21), p.3144-3146
Hauptverfasser: Teuschler, T., Mahr, K., Miyazaki, S., Hundhausen, M., Ley, L.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114861