Inductively coupled radio frequency plasma chemical vapor deposition using a ladder‐shaped antenna

Radio‐frequency (rf) excited SiH4 plasma is produced with an electrode of a ladder‐shaped antenna which is positioned within a plasma chamber. The negative self‐bias potential on the electrode is a few volts under a gas pressure 50 mTorr, rf power of 20–100 W. It was observed that the phase of the potential precedes the current fed to the electrode. Hydrogenated amorphous silicon films are formed on a 300 mm×300 mm substrate with a uniformity of ±15%.