All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

We report on the growth of 980-nm strained-layer InGaAs/GaInAsP/GaInP separated confinement quantum well lasers using all solid source molecular beam epitaxy. Valved cracker cells were employed for both phosphorus and arsenic. Fabricated lasers exhibited excellent performance that is comparable to similar lasers grown by gas source molecular beam epitaxy in our laboratory. A maximum output power of 450 mW and over 250 mW in single mode operation was achieved for ridge waveguide lasers with AR/HR coated facets.