Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge
Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of...
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| Veröffentlicht in: | Review of Scientific Instruments 1990-01, Vol.61 (1), p.598-600 |
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| container_title | Review of Scientific Instruments |
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| creator | Yoshida, Yoshikazu Ohnishi, Teruhito Hirofuji, Yuichi Ikeda, Tanejiro |
| description | Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of a Ta+‐ion beam is 1.8×10−
7 m rad, the plasma density is 4×101
2 cm−
3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10−
7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant. |
| doi_str_mv | 10.1063/1.1141929 |
| format | Article |
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7 m rad, the plasma density is 4×101
2 cm−
3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10−
7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant.</description><identifier>ISSN: 0034-6748</identifier><identifier>EISSN: 1089-7623</identifier><identifier>DOI: 10.1063/1.1141929</identifier><identifier>CODEN: RSINAK</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Exact sciences and technology ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges</subject><ispartof>Review of Scientific Instruments, 1990-01, Vol.61 (1), p.598-600</ispartof><rights>American Institute of Physics</rights><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-ba53d1bccc405c9f4b62e8ac711d13e5e50536c1fe925fdcc4fbbf3fe6a9240b3</citedby><cites>FETCH-LOGICAL-c362t-ba53d1bccc405c9f4b62e8ac711d13e5e50536c1fe925fdcc4fbbf3fe6a9240b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/rsi/article-lookup/doi/10.1063/1.1141929$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,1556,4038,4039,23913,23914,25123,27907,27908,76141</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19465167$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoshida, Yoshikazu</creatorcontrib><creatorcontrib>Ohnishi, Teruhito</creatorcontrib><creatorcontrib>Hirofuji, Yuichi</creatorcontrib><creatorcontrib>Ikeda, Tanejiro</creatorcontrib><title>Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge</title><title>Review of Scientific Instruments</title><description>Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of a Ta+‐ion beam is 1.8×10−
7 m rad, the plasma density is 4×101
2 cm−
3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10−
7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant.</description><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><issn>0034-6748</issn><issn>1089-7623</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KxDAUhYMoOI4ufINsXCh0zG2adLqUwT8YUFDXJU1vOpFOW5J2Bl35CD6jT2J0Bmald3O48J3DvYeQU2ATYJJfwgQggSzO9sgI2DSLUhnzfTJijCeRTJPpITny_pWFEQAjop-6oe_R2aaitm2obwenka5tv6DeLoe6Vw22g6eDR9oaurTatWu1Qqqakj5i0wTn18dn8Np31QcJS6WGCmlpvV4oV-ExOTCq9niy1TF5ubl-nt1F84fb-9nVPNJcxn1UKMFLKLTWCRM6M0khY5wqnQKUwFGgYIJLDQazWJgyYKYoDDcoVRYnrOBjcr7JDSd679DknbNL5d5yYPlPOznk23YCe7ZhO-W1qo1TjbZ-Z8gSKUCmgbvYcF7b_ve_f0P_hFet24F5Vxr-DekVhTs</recordid><startdate>199001</startdate><enddate>199001</enddate><creator>Yoshida, Yoshikazu</creator><creator>Ohnishi, Teruhito</creator><creator>Hirofuji, Yuichi</creator><creator>Ikeda, Tanejiro</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199001</creationdate><title>Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge</title><author>Yoshida, Yoshikazu ; Ohnishi, Teruhito ; Hirofuji, Yuichi ; Ikeda, Tanejiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-ba53d1bccc405c9f4b62e8ac711d13e5e50536c1fe925fdcc4fbbf3fe6a9240b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Yoshikazu</creatorcontrib><creatorcontrib>Ohnishi, Teruhito</creatorcontrib><creatorcontrib>Hirofuji, Yuichi</creatorcontrib><creatorcontrib>Ikeda, Tanejiro</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Review of Scientific Instruments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshida, Yoshikazu</au><au>Ohnishi, Teruhito</au><au>Hirofuji, Yuichi</au><au>Ikeda, Tanejiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge</atitle><jtitle>Review of Scientific Instruments</jtitle><date>1990-01</date><risdate>1990</risdate><volume>61</volume><issue>1</issue><spage>598</spage><epage>600</epage><pages>598-600</pages><issn>0034-6748</issn><eissn>1089-7623</eissn><coden>RSINAK</coden><abstract>Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of a Ta+‐ion beam is 1.8×10−
7 m rad, the plasma density is 4×101
2 cm−
3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10−
7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1141929</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Review of Scientific Instruments, 1990-01, Vol.61 (1), p.598-600 |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | Exact sciences and technology Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges |
| title | Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge |
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