Sputtering ion source with simultaneous use of microwave and Penning‐ionization‐gauge discharge

Characteristics of Penning‐ionization‐gauge‐type compact microwave metal‐ion source are described. This ion source can operate with two different discharge modes: the positive‐resistance region mode and the negative‐resistance region mode. In the positive‐resistance region, a normalized emittance of a Ta+‐ion beam is 1.8×10− 7 m rad, the plasma density is 4×101 2 cm− 3, and the electron temperature is about 6 eV. In the negative‐resistance region, the emittance is 2.7×10− 7 m rad. This ion source is suitable for operation in the positive‐resistance region where the microwave discharge is dominant.