Investigation of fast diffusing impurities in silicon by a transient ion drift method

Transient ion drift in a depletion region of a Schottky barrier has been used to investigate Cu diffusion in boron or aluminum doped silicon. It is shown that in the investigated temperature range, the Cu-boron pairing is negligible, while for the other acceptors it is well described by a Coulombic interaction. In order to test the validity of the model used to extract the diffusion coefficient, the method has been applied to the well-known Li diffusion in silicon. For both Li and Cu ions, an excellent agreement with literature diffusivity data was obtained.