Setup for the simultaneous measurement of quasistatic and high‐frequency C–V characteristics of MOS capacitors

Setup for the simultaneous measurement of quasistatic and high‐frequency C–V characteristics of MOS capacitors

A new apparatus for the simultaneous measurement of quasistatic and high‐frequency (100 kHz) capacitance–voltage curves of MOS (metal‐oxide semiconductor) structures is presented. The electronic circuit is relatively simple because of an extensive use of operational amplifiers; the main feature is a...

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Veröffentlicht in:Review of scientific instruments 1982-09, Vol.53 (9), p.1452-1455
Hauptverfasser: Greeuw, G., Hillen, M. W., Köhnke, G. H. P.
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Sprache:eng
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container_end_page 1455
container_issue 9
container_start_page 1452
container_title Review of scientific instruments
container_volume 53
creator Greeuw, G.
Hillen, M. W.
Köhnke, G. H. P.
description A new apparatus for the simultaneous measurement of quasistatic and high‐frequency (100 kHz) capacitance–voltage curves of MOS (metal‐oxide semiconductor) structures is presented. The electronic circuit is relatively simple because of an extensive use of operational amplifiers; the main feature is a wide band amplifier (HA‐2065) which converts both the dc (quasistatic) and the ac (100 kHz) signal. Also presented are experimental results of one of the applications of this setup.
doi_str_mv 10.1063/1.1137195
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title Setup for the simultaneous measurement of quasistatic and high‐frequency C–V characteristics of MOS capacitors
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