Setup for the simultaneous measurement of quasistatic and high‐frequency C–V characteristics of MOS capacitors
A new apparatus for the simultaneous measurement of quasistatic and high‐frequency (100 kHz) capacitance–voltage curves of MOS (metal‐oxide semiconductor) structures is presented. The electronic circuit is relatively simple because of an extensive use of operational amplifiers; the main feature is a...
Gespeichert in:
| Veröffentlicht in: | Review of scientific instruments 1982-09, Vol.53 (9), p.1452-1455 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A new apparatus for the simultaneous measurement of quasistatic and high‐frequency (100 kHz) capacitance–voltage curves of MOS (metal‐oxide semiconductor) structures is presented. The electronic circuit is relatively simple because of an extensive use of operational amplifiers; the main feature is a wide band amplifier (HA‐2065) which converts both the dc (quasistatic) and the ac (100 kHz) signal. Also presented are experimental results of one of the applications of this setup. |
|---|---|
| ISSN: | 0034-6748 1089-7623 |
| DOI: | 10.1063/1.1137195 |