Temperature dependent electrically detected magnetic resonance studies on silicon pn diodes

We report on electrically detected magnetic resonance (EDMR) studies in silicon pn diodes in the temperature range from 30 to 300 K. In the range from 150 to 300 K the resonance effect is, as usually observed, much larger than expected by spin polarization. From 150 K down to 30 K the spin resonance effect increases by a factor of 25, which is attributed to spin polarization of free electrons and electrons bound to recombination centers. Our investigation suggests that at least two different mechanisms contribute to the EDMR signal.