Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures

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Veröffentlicht in:Applied physics letters 1995-03, Vol.66 (11), p.1346-1348
Hauptverfasser: Massa, J. S., Buller, G. S., Walker, A. C., Horsburgh, G., Mullins, J. T., Prior, K. A., Cavenett, B. C.
Format: Artikel
Sprache:eng
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Zusammenfassung:Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113196