Ultrafast band-edge carrier dynamics in In0.65Ga0.35As
The ultrafast band-edge carrier dynamics in In0.65Ga0.35As/GaAs are studied using a transmission correlation technique in the 77–300 K temperature range. The experiment is performed using a femtosecond optical parametric oscillator tunable in the 1.5–1.8 μm spectral range with sub-100-fs pulses. Rap...
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| Veröffentlicht in: | Applied physics letters 1994-10, Vol.65 (18), p.2323-2325 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The ultrafast band-edge carrier dynamics in In0.65Ga0.35As/GaAs are studied using a transmission correlation technique in the 77–300 K temperature range. The experiment is performed using a femtosecond optical parametric oscillator tunable in the 1.5–1.8 μm spectral range with sub-100-fs pulses. Rapid recovery (≤10 ps) of the nonlinear absorption is observed, suggesting an exceptionally high rate of recombination predominantly due to dislocations at the InGaAs/GaAs heterojunction. The phonon-scattering time is experimentally identified and measured to be 200–400 fs. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.112963 |