Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP

We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1994-09, Vol.65 (13), p.1689-1691
Hauptverfasser:	Jiang, X. P., Thiagarajan, P., Patrizi, G. A., Robinson, G. Y., Temkin, H., Forouhar, S., Vandenberg, J. M., Coblentz, D., Logan, R. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!