Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP

We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model.