Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP
We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters...
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| Veröffentlicht in: | Applied physics letters 1994-09, Vol.65 (13), p.1689-1691 |
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| Sprache: | eng |
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| container_title | Applied physics letters |
| container_volume | 65 |
| creator | Jiang, X. P. Thiagarajan, P. Patrizi, G. A. Robinson, G. Y. Temkin, H. Forouhar, S. Vandenberg, J. M. Coblentz, D. Logan, R. A. |
| description | We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model. |
| doi_str_mv | 10.1063/1.112887 |
| format | Article |
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P.</au><au>Thiagarajan, P.</au><au>Patrizi, G. A.</au><au>Robinson, G. Y.</au><au>Temkin, H.</au><au>Forouhar, S.</au><au>Vandenberg, J. M.</au><au>Coblentz, D.</au><au>Logan, R. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP</atitle><jtitle>Applied physics letters</jtitle><date>1994-09-26</date><risdate>1994</risdate><volume>65</volume><issue>13</issue><spage>1689</spage><epage>1691</epage><pages>1689-1691</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model.</abstract><doi>10.1063/1.112887</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1994-09, Vol.65 (13), p.1689-1691 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_112887 |
| source | AIP Digital Archive |
| title | Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP |
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