Hole effective mass in remote doped Si/Si1− x Ge x quantum wells with 0.05≤ x ≤0.3

Hole effective mass in remote doped Si/Si1− x Ge x quantum wells with 0.05≤ x ≤0.3

The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05≤x≤0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Γ-point valu...

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Veröffentlicht in:Applied physics letters 1994-12, Vol.65 (26), p.3362-3364
Hauptverfasser: Whall, T. E., Plews, A. D., Mattey, N. L., Parker, E. H. C.
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container_end_page 3364
container_issue 26
container_start_page 3362
container_title Applied physics letters
container_volume 65
creator Whall, T. E.
Plews, A. D.
Mattey, N. L.
Parker, E. H. C.
description The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05≤x≤0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Γ-point values for the ground-state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections.
doi_str_mv 10.1063/1.112392
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title Hole effective mass in remote doped Si/Si1− x Ge x quantum wells with 0.05≤ x ≤0.3
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