Hole effective mass in remote doped Si/Si1− x Ge x quantum wells with 0.05≤ x ≤0.3

The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05≤x≤0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Γ-point values for the ground-state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections.