Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition

This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm b...

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Veröffentlicht in:Applied physics letters 1994-08, Vol.65 (5), p.567-569
Hauptverfasser: Xing, Q. J., Brebner, J. L., Masut, R. A., Ahmad, G., Zhao, G., Tran, C. A., Isnard, L.
Format: Artikel
Sprache:eng
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Zusammenfassung:This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm broad area laser device. The characteristic temperature T0 was found to be 190 K between 100 and 130 K, and 147 K between 130 and 300 K. The lasing wavelength was 1.7 μm at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112297