Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition
This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm b...
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Veröffentlicht in: | Applied physics letters 1994-08, Vol.65 (5), p.567-569 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm broad area laser device. The characteristic temperature T0 was found to be 190 K between 100 and 130 K, and 147 K between 130 and 300 K. The lasing wavelength was 1.7 μm at room temperature. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.112297 |