1.54-μm photoluminescence from Er-implanted GaN and AlN

1.54-μm photoluminescence from Er-implanted GaN and AlN

We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as i...

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Veröffentlicht in:Applied physics letters 1994-08, Vol.65 (8), p.992-994
Hauptverfasser: Wilson, R. G., Schwartz, R. N., Abernathy, C. R., Pearton, S. J., Newman, N., Rubin, M., Fu, T., Zavada, J. M.
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Sprache:eng
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Zusammenfassung:We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112172