Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of th...

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Veröffentlicht in:Applied physics letters 1994-09, Vol.65 (10), p.1236-1238
Hauptverfasser: Ossikovski, R., Blayo, N., Drévillon, B., Firon, M., Delahaye, B., Mayeux, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112081