Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry
A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of th...
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Veröffentlicht in: | Applied physics letters 1994-09, Vol.65 (10), p.1236-1238 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.112081 |