High-temperature stable Ir-Al/ n -GaAs Schottky diodes

High-temperature stable Ir-Al/ n -GaAs Schottky diodes

We report on the excellent thermal stability of Ir-Al/GaAs Schottky contact based on sequentially evaporated Ir-Al bimetallic system with an aluminum concentration of approximately 25 at. %. The contact system is stable up to 950 °C for 10 s (capless rapid thermal annealing) and exhibits an enhancem...

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Veröffentlicht in:Applied physics letters 1994-04, Vol.64 (14), p.1818-1820
Hauptverfasser: Lalinský, T., Gregušová, D., Mozolová, Ž., Breza, J., Vogrinčič, P.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the excellent thermal stability of Ir-Al/GaAs Schottky contact based on sequentially evaporated Ir-Al bimetallic system with an aluminum concentration of approximately 25 at. %. The contact system is stable up to 950 °C for 10 s (capless rapid thermal annealing) and exhibits an enhancement of the barrier height with the temperature of annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111988