New microfabrication technique by synchrotron radiation-excited etching: Use of noncontact mask on a submicrometer scale

Synchrotron radiation (SR)-excited etching of Si using a noncontact mask on a submicrometer scale has been investigated. The blank pattern of the noncontact mask was replicated on the etched surface and highly area-selective etching was realized at the size of ∼0.4 μm. The spatial photointensity distribution of SR on the sample determined the depth profile of the etched part of the sample.