Enhanced electroluminescence of AlP/GaP disordered superlattice

Enhanced electroluminescence of AlP/GaP disordered superlattice

Electroluminescent diodes with active layers of Al0.5Ga0.5P bulk alloy (b-AL), (AlP)5/(GaP)5 ordered superlattice (o-SL), and (AlP)m/(GaP)n (m,n=3,6,9) disordered superlattice (d-SL) are fabricated by organometallic vapor phase epitaxy using tertiarybutylphosphine. Stronger injection electroluminesc...

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Veröffentlicht in:Applied physics letters 1994-04, Vol.64 (15), p.2016-2018
Hauptverfasser: Sasaki, Akio, Wang, Xue-Lun, Wakahara, Akihiro
Format: Artikel
Sprache:eng
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Zusammenfassung:Electroluminescent diodes with active layers of Al0.5Ga0.5P bulk alloy (b-AL), (AlP)5/(GaP)5 ordered superlattice (o-SL), and (AlP)m/(GaP)n (m,n=3,6,9) disordered superlattice (d-SL) are fabricated by organometallic vapor phase epitaxy using tertiarybutylphosphine. Stronger injection electroluminescence is observed from the d-SL diode as compared with the b-AL and the o-SL diodes. The total light output of the d-SL diode is about 4–5 times stronger than that of the b-AL and the o-SL diodes. The result indicates the remarkable luminescence capability of the d-SL.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111724