Threshold current density of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs
The theoretical study on the threshold current density (Jth) of InxGa1−xAs/InGaAsP quantum well (QW) lasers lattice matched to GaAs is presented. The results are also compared with those of InxGa1−xAs/GaAs QW lasers. For relatively long cavity length (≳1000 μm), two lasers have similar values of the...
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| Veröffentlicht in: | Applied physics letters 1994-05, Vol.64 (21), p.2855-2857 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The theoretical study on the threshold current density (Jth) of InxGa1−xAs/InGaAsP quantum well (QW) lasers lattice matched to GaAs is presented. The results are also compared with those of InxGa1−xAs/GaAs QW lasers. For relatively long cavity length (≳1000 μm), two lasers have similar values of the Jth for x |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.111448 |