Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the dr...

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Veröffentlicht in:Applied physics letters 1994-03, Vol.64 (10), p.1230-1232
Hauptverfasser: Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, Selim E., Ferry, D. K., Maracas, G., Droopad, Ravi, Salvador, A., Botcharev, A., Morkoç, H.
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container_end_page 1232
container_issue 10
container_start_page 1230
container_title Applied physics letters
container_volume 64
creator Grann, E. D.
Sheih, S. J.
Chia, C.
Tsen, K. T.
Sankey, O. F.
Guncer, Selim E.
Ferry, D. K.
Maracas, G.
Droopad, Ravi
Salvador, A.
Botcharev, A.
Morkoç, H.
description Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as Vd=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
doi_str_mv 10.1063/1.110848
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title Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors
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