Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the dr...

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Veröffentlicht in:Applied physics letters 1994-03, Vol.64 (10), p.1230-1232
Hauptverfasser: Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, Selim E., Ferry, D. K., Maracas, G., Droopad, Ravi, Salvador, A., Botcharev, A., Morkoç, H.
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Sprache:eng
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Zusammenfassung:Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as Vd=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110848