Evidence for hydrogen accumulation at strained layer heterojunctions

The incorporation of hydrogen into strained InxGa1−xAs/GaAs quantum wells results in the formation of shallow, H-related radiative states which compete with, and quench, the intrinsic band-to-band luminescence. By comparing the photoluminescence data obtained from hydrogenated material with secondar...

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Veröffentlicht in:	Applied physics letters 1993-08, Vol.63 (7), p.926-928
Hauptverfasser:	SOBIESIERSKI, Z, CLEGG, J. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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