Evidence for hydrogen accumulation at strained layer heterojunctions

The incorporation of hydrogen into strained InxGa1−xAs/GaAs quantum wells results in the formation of shallow, H-related radiative states which compete with, and quench, the intrinsic band-to-band luminescence. By comparing the photoluminescence data obtained from hydrogenated material with secondary ion mass spectroscopy profiles from deuterated material, it is possible to deduce that the H-related radiative states are associated with H which is accumulated at the well interfaces.