Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions

Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions

It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defect...

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Veröffentlicht in:Applied physics letters 1993-11, Vol.63 (19), p.2647-2648
Hauptverfasser: DANILIN, A. B, NEMIROVSKI, A. W
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creator DANILIN, A. B
NEMIROVSKI, A. W
description It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defects.
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_110408</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3841796</sourcerecordid><originalsourceid>FETCH-LOGICAL-c217t-31d7354e299e6f45e7f533b347e2026ec71abf667fac6a6d146471d60ea246fe3</originalsourceid><addsrcrecordid>eNo9kE9LAzEQxYMoWKvgR8jBg5etmU026R6laC0UvOh5SZOJjWyTJYl_6qd3S0UYGIb5vQfvEXINbAZM8juYATDB5idkAkypigPMT8mEMcYr2TZwTi5yfh_PpuZ8Qn5Wu0GbQqOjPtDsywcdtrFE_Da-6OJjoOOULVKLDk3xn77sD3T2vTfjq9d7TNTvhl6HgpZ--bKl1juHCUOhNmakSRfMB1HwJcU3DHT0zZfkzOk-49XfnpLXx4eXxVO1fl6uFvfrytSgyhjAKt4IrNsWpRMNKtdwvuFCYc1qiUaB3jgpldNGamlBSKHASoa6FtIhn5Lbo69JMeeErhuS3-m074B1h8466I6djejNER10Nrp3SQfj8z_P5wJUK_kvAW1s7w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions</title><source>AIP Digital Archive</source><creator>DANILIN, A. B ; NEMIROVSKI, A. W</creator><creatorcontrib>DANILIN, A. B ; NEMIROVSKI, A. W</creatorcontrib><description>It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110408</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><ispartof>Applied physics letters, 1993-11, Vol.63 (19), p.2647-2648</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c217t-31d7354e299e6f45e7f533b347e2026ec71abf667fac6a6d146471d60ea246fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3841796$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DANILIN, A. B</creatorcontrib><creatorcontrib>NEMIROVSKI, A. W</creatorcontrib><title>Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions</title><title>Applied physics letters</title><description>It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defects.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKvgR8jBg5etmU026R6laC0UvOh5SZOJjWyTJYl_6qd3S0UYGIb5vQfvEXINbAZM8juYATDB5idkAkypigPMT8mEMcYr2TZwTi5yfh_PpuZ8Qn5Wu0GbQqOjPtDsywcdtrFE_Da-6OJjoOOULVKLDk3xn77sD3T2vTfjq9d7TNTvhl6HgpZ--bKl1juHCUOhNmakSRfMB1HwJcU3DHT0zZfkzOk-49XfnpLXx4eXxVO1fl6uFvfrytSgyhjAKt4IrNsWpRMNKtdwvuFCYc1qiUaB3jgpldNGamlBSKHASoa6FtIhn5Lbo69JMeeErhuS3-m074B1h8466I6djejNER10Nrp3SQfj8z_P5wJUK_kvAW1s7w</recordid><startdate>19931108</startdate><enddate>19931108</enddate><creator>DANILIN, A. B</creator><creator>NEMIROVSKI, A. W</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19931108</creationdate><title>Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions</title><author>DANILIN, A. B ; NEMIROVSKI, A. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c217t-31d7354e299e6f45e7f533b347e2026ec71abf667fac6a6d146471d60ea246fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DANILIN, A. B</creatorcontrib><creatorcontrib>NEMIROVSKI, A. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DANILIN, A. B</au><au>NEMIROVSKI, A. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions</atitle><jtitle>Applied physics letters</jtitle><date>1993-11-08</date><risdate>1993</risdate><volume>63</volume><issue>19</issue><spage>2647</spage><epage>2648</epage><pages>2647-2648</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defects.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.110408</doi><tpages>2</tpages></addata></record>
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title Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T03%3A40%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20in%20situ%20photoexcitation%20on%20the%20defectivity%20of%20silicon%20layer%20implanted%20with%20different%20dose%20rates%20of%20nitrogen%20ions&rft.jtitle=Applied%20physics%20letters&rft.au=DANILIN,%20A.%20B&rft.date=1993-11-08&rft.volume=63&rft.issue=19&rft.spage=2647&rft.epage=2648&rft.pages=2647-2648&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.110408&rft_dat=%3Cpascalfrancis_cross%3E3841796%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true