Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions
It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defect...
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| Veröffentlicht in: | Applied physics letters 1993-11, Vol.63 (19), p.2647-2648 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | It was shown using x-ray diffractometry method that dose rate does not influence the defectivity degree of N+-implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial-type defects. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.110408 |