Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy...

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Veröffentlicht in:Applied physics letters 1993-11, Vol.63 (20), p.2800-2802
Hauptverfasser: Mensz, P. M., Herko, S., Haberern, K. W., Gaines, J., Ponzoni, C.
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container_end_page 2802
container_issue 20
container_start_page 2800
container_title Applied physics letters
container_volume 63
creator Mensz, P. M.
Herko, S.
Haberern, K. W.
Gaines, J.
Ponzoni, C.
description Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen acceptors in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1−xMgxSySe1−y:N, exhibited a significantly lower value of room-temperature mobility of holes, and fast-carrier freeze-out at relatively high temperature, approximately T=200 K.
doi_str_mv 10.1063/1.110339
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title Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films
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