Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy...

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Veröffentlicht in:Applied physics letters 1993-11, Vol.63 (20), p.2800-2802
Hauptverfasser: Mensz, P. M., Herko, S., Haberern, K. W., Gaines, J., Ponzoni, C.
Format: Artikel
Sprache:eng
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Zusammenfassung:Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen acceptors in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1−xMgxSySe1−y:N, exhibited a significantly lower value of room-temperature mobility of holes, and fast-carrier freeze-out at relatively high temperature, approximately T=200 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110339