Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be ac...

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Veröffentlicht in:	Applied physics letters 1993-08, Vol.63 (7), p.949-951
Hauptverfasser:	BENNETT, B. R, SHANABROK, B. V, WAGNER, R. J, DAVIS, J. L, WATERMAN, J. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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