Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy
The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be ac...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 1993-08, Vol.63 (7), p.949-951 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.109854 |