Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be ac...

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Veröffentlicht in:Applied physics letters 1993-08, Vol.63 (7), p.949-951
Hauptverfasser: BENNETT, B. R, SHANABROK, B. V, WAGNER, R. J, DAVIS, J. L, WATERMAN, J. R
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Sprache:eng
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Zusammenfassung:The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109854