Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy
The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be ac...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1993-08, Vol.63 (7), p.949-951 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 951 |
|---|---|
| container_issue | 7 |
| container_start_page | 949 |
| container_title | Applied physics letters |
| container_volume | 63 |
| creator | BENNETT, B. R SHANABROK, B. V WAGNER, R. J DAVIS, J. L WATERMAN, J. R |
| description | The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces. |
| doi_str_mv | 10.1063/1.109854 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_109854</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4863347</sourcerecordid><originalsourceid>FETCH-LOGICAL-c254t-80a777adc11fcd14eb94c7a0107740735920de080477ea6578f95db71f4068353</originalsourceid><addsrcrecordid>eNo9kMFLwzAYxYMoOKfgn5CDBy91X5akSY9j6BwMPKhHKV_TRCttU5IM7X-_jomnx3v8ePAeIbcMHhjkfMEmKbQUZ2TGQKmMM6bPyQwAeJYXkl2Sqxi_JyuXnM_Ix9r3KfiWekebPtng0Fgak2_MV-M7m8I45XTbr-Jig68VjfvBhhZTaoyN9DP4n55WI-18a82-xUArix21Q5Pwd7wmFw7baG_-dE7enx7f1s_Z7mWzXa92mVlKkTINqJTC2jDmTM2ErQphFMJxgADFZbGE2oIGoZTFXCrtCllXijkBueaSz8n9qdcEH2OwrhxC02EYSwbl8ZaSladbJvTuhA4YDbYuYG-a-M8LnXMuFD8AC6phOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy</title><source>AIP Digital Archive</source><creator>BENNETT, B. R ; SHANABROK, B. V ; WAGNER, R. J ; DAVIS, J. L ; WATERMAN, J. R</creator><creatorcontrib>BENNETT, B. R ; SHANABROK, B. V ; WAGNER, R. J ; DAVIS, J. L ; WATERMAN, J. R</creatorcontrib><description>The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.109854</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1993-08, Vol.63 (7), p.949-951</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c254t-80a777adc11fcd14eb94c7a0107740735920de080477ea6578f95db71f4068353</citedby><cites>FETCH-LOGICAL-c254t-80a777adc11fcd14eb94c7a0107740735920de080477ea6578f95db71f4068353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4863347$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BENNETT, B. R</creatorcontrib><creatorcontrib>SHANABROK, B. V</creatorcontrib><creatorcontrib>WAGNER, R. J</creatorcontrib><creatorcontrib>DAVIS, J. L</creatorcontrib><creatorcontrib>WATERMAN, J. R</creatorcontrib><title>Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy</title><title>Applied physics letters</title><description>The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kMFLwzAYxYMoOKfgn5CDBy91X5akSY9j6BwMPKhHKV_TRCttU5IM7X-_jomnx3v8ePAeIbcMHhjkfMEmKbQUZ2TGQKmMM6bPyQwAeJYXkl2Sqxi_JyuXnM_Ix9r3KfiWekebPtng0Fgak2_MV-M7m8I45XTbr-Jig68VjfvBhhZTaoyN9DP4n55WI-18a82-xUArix21Q5Pwd7wmFw7baG_-dE7enx7f1s_Z7mWzXa92mVlKkTINqJTC2jDmTM2ErQphFMJxgADFZbGE2oIGoZTFXCrtCllXijkBueaSz8n9qdcEH2OwrhxC02EYSwbl8ZaSladbJvTuhA4YDbYuYG-a-M8LnXMuFD8AC6phOg</recordid><startdate>19930816</startdate><enddate>19930816</enddate><creator>BENNETT, B. R</creator><creator>SHANABROK, B. V</creator><creator>WAGNER, R. J</creator><creator>DAVIS, J. L</creator><creator>WATERMAN, J. R</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930816</creationdate><title>Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy</title><author>BENNETT, B. R ; SHANABROK, B. V ; WAGNER, R. J ; DAVIS, J. L ; WATERMAN, J. R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-80a777adc11fcd14eb94c7a0107740735920de080477ea6578f95db71f4068353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BENNETT, B. R</creatorcontrib><creatorcontrib>SHANABROK, B. V</creatorcontrib><creatorcontrib>WAGNER, R. J</creatorcontrib><creatorcontrib>DAVIS, J. L</creatorcontrib><creatorcontrib>WATERMAN, J. R</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BENNETT, B. R</au><au>SHANABROK, B. V</au><au>WAGNER, R. J</au><au>DAVIS, J. L</au><au>WATERMAN, J. R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1993-08-16</date><risdate>1993</risdate><volume>63</volume><issue>7</issue><spage>949</spage><epage>951</epage><pages>949-951</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The InAs/GaSb materials system, with different species for both cations and anions, allows one to envision the construction of heterojunctions with either InSb- or GaAs-like interfaces. As a result, this system provides a unique opportunity to explore the limits of interfacial control that can be achieved at the monolayer level by vapor phase growth techniques. Using migration-enhanced epitaxial techniques, we have prepared a series of InAs/GaSb superlattices with both types of interfaces. The large differences in bond lengths and vibrational properties of InSb and GaAs interfaces allow x-ray diffraction and Raman spectroscopy to be sensitive probes of interfacial structure. The x-ray and Raman measurements reveal that it is possible to grow superlattices with almost pure InSb-like or GaAs-like interfaces.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109854</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-08, Vol.63 (7), p.949-951 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_109854 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T18%3A59%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Control%20of%20interface%20stoichiometry%20in%20InAs/GaSb%20superlattices%20grown%20by%20molecular%20beam%20epitaxy&rft.jtitle=Applied%20physics%20letters&rft.au=BENNETT,%20B.%20R&rft.date=1993-08-16&rft.volume=63&rft.issue=7&rft.spage=949&rft.epage=951&rft.pages=949-951&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.109854&rft_dat=%3Cpascalfrancis_cross%3E4863347%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |