Observation of random-telegraph noise in resonant-tunneling diodes

We report the observation of random-telegraph noise in GaAs/Al0.4Ga0.6As resonant tunneling diodes. Measurements made on our devices from 57 to 70 K revealed discrete switching events with step heights ranging from 6 to 20 μV. Our studies indicated that the 20-μV switching sequences correspond to two-state thermally activated processes involving a single trap. At a bias of −0.4 V, the capture and emission activation energies of this trap are 81 and 51 meV, respectively, implying that the trap is located in the barrier. Our results suggest that the noise arises from transmission coefficient fluctuations due to hopping conduction of carriers through the barrier.