In   situ , rf plasma deposition of Bi2Sr2Ca2Cu3O x thin films at atmospheric pressure

Superconducting Bi2Sr2Ca2Cu3Ox thin films have been prepared in situ at atmospheric pressure by an inductively coupled, argon-oxygen rf plasma. This high Tc phase has been achieved by exposing the grown film, in situ, to the same argon-oxygen plasma used for the deposition of the film. No post-annea...

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Veröffentlicht in:Applied physics letters 1993-05, Vol.62 (19), p.2422-2424
Hauptverfasser: Shah, A., Patel, S., Narumi, E., Shaw, D. T.
Format: Artikel
Sprache:eng
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Zusammenfassung:Superconducting Bi2Sr2Ca2Cu3Ox thin films have been prepared in situ at atmospheric pressure by an inductively coupled, argon-oxygen rf plasma. This high Tc phase has been achieved by exposing the grown film, in situ, to the same argon-oxygen plasma used for the deposition of the film. No post-annealing steps are required. Bi2Sr2Ca2Cu3Ox films with critical temperatures of 100 K and critical current densities of 1×105 A/cm2 at 77 K and zero field have been obtained at a deposition rate of 100–200 Å/min. The films are mirror smooth with very few particulates and pinholes. Control of the substrate heater temperature is critical as high-quality films grow only in a narrow temperature range. The effect of plasma treatment and substrate heater temperature is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109384