In situ , rf plasma deposition of Bi2Sr2Ca2Cu3O x thin films at atmospheric pressure
Superconducting Bi2Sr2Ca2Cu3Ox thin films have been prepared in situ at atmospheric pressure by an inductively coupled, argon-oxygen rf plasma. This high Tc phase has been achieved by exposing the grown film, in situ, to the same argon-oxygen plasma used for the deposition of the film. No post-annea...
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Veröffentlicht in: | Applied physics letters 1993-05, Vol.62 (19), p.2422-2424 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Superconducting Bi2Sr2Ca2Cu3Ox thin films have been prepared in situ at atmospheric pressure by an inductively coupled, argon-oxygen rf plasma. This high Tc phase has been achieved by exposing the grown film, in situ, to the same argon-oxygen plasma used for the deposition of the film. No post-annealing steps are required. Bi2Sr2Ca2Cu3Ox films with critical temperatures of 100 K and critical current densities of 1×105 A/cm2 at 77 K and zero field have been obtained at a deposition rate of 100–200 Å/min. The films are mirror smooth with very few particulates and pinholes. Control of the substrate heater temperature is critical as high-quality films grow only in a narrow temperature range. The effect of plasma treatment and substrate heater temperature is discussed. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.109384 |