Polycrystalline silicon thin film transistors on corning 7059 glass substrates using short time, low-temperature processing

A new fabrication process for polycrystalline silicon thin film transistors on 7059 glass substrates is reported. This unique fabrication process has the advantages of short processing time and low processing temperature (≤600 °C). The processing is based on the key step of using an ultrathin Pd layer, introduced to the surface of the glass prior to the deposition of an a-Si:H film, to reduce the crystallization time and temperature. It is also based on using an electron cyclotron resonance hydrogen plasma to reduced the passivation time. The n-channel TFTs produced by this new fabrication process have mobilities of 20 cm2/V s, and off-currents of 0.5 pA/μm.