Carrier transport limited bandwidth of 1.55 μm quantum-well lasers

We present the first measurements of the dynamic response of InGaAs/InGaAsP multiquantum-well lasers which clearly show the effect of the carrier transport phenomena on the modulation response. Using our parasitic-free optical modulation method, we separate an intrinsic RC-like component in the freq...

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Veröffentlicht in:	Applied physics letters 1993-01, Vol.62 (1), p.52-54
Hauptverfasser:	GRABMAIER, A, SCHÖFTHALER, M, HANGLEITER, A, KAZMIERSKI, C, BLEZ, M, OUGAZZADEN, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
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Beschreibung
Zusammenfassung:	We present the first measurements of the dynamic response of InGaAs/InGaAsP multiquantum-well lasers which clearly show the effect of the carrier transport phenomena on the modulation response. Using our parasitic-free optical modulation method, we separate an intrinsic RC-like component in the frequency response from normal resonance behavior. The bandwidth is strongly limited by this low-pass rolloff that can be described by a structure-dependent transport time. It is shown that, therefore, the K factor may not be a reasonable quantity for evaluating the ultimate bandwidth.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.108816