In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates

We report the first realization of three-dimensionally confined semiconductor heterostructures via a one-step growth on nonplanar patterned substrate. Truncated pyramidal shaped mesas on GaAs (111)B patterned substrates are employed and a substrate encoded size reducing epitaxical growth process exp...

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Veröffentlicht in:	Applied physics letters 1993-03, Vol.62 (13), p.1547-1549
Hauptverfasser:	MADHUKAR, A, RAJKUMAR, K. C, CHEN, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	We report the first realization of three-dimensionally confined semiconductor heterostructures via a one-step growth on nonplanar patterned substrate. Truncated pyramidal shaped mesas on GaAs (111)B patterned substrates are employed and a substrate encoded size reducing epitaxical growth process exploited to realize GaAs pinched-off pyramidal volumes of base ∼50 nm and height 13 nm.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.108636