Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors

Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors

In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized...

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Veröffentlicht in:Applied physics letters 1992-10, Vol.61 (15), p.1826-1828
Hauptverfasser: WANG, Z, MUI, D. S. L, DEMIREL, A. L, BISWAS, D, REED, J, MORKOC, H
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 1828
container_issue 15
container_start_page 1826
container_title Applied physics letters
container_volume 61
creator WANG, Z
MUI, D. S. L
DEMIREL, A. L
BISWAS, D
REED, J
MORKOC, H
description In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized by a small frequency dispersion, small hysteresis, a flat band voltage close to zero, and a minimum interface trap density of 2.4×1011 eV−1 cm−2.
doi_str_mv 10.1063/1.108387
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors
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