Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors

In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized...

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Veröffentlicht in:	Applied physics letters 1992-10, Vol.61 (15), p.1826-1828
Hauptverfasser:	WANG, Z, MUI, D. S. L, DEMIREL, A. L, BISWAS, D, REED, J, MORKOC, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized by a small frequency dispersion, small hysteresis, a flat band voltage close to zero, and a minimum interface trap density of 2.4×1011 eV−1 cm−2.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.108387