Second harmonic generation in InGaAsP waveguides at 1.3 μm wavelength

We report the first surface emission of red light from an InGaAs waveguide, generated by the nonlinear mixing of two counterpropagating guided waves at wavelengths around 1.3 μm. A nine layer InGaAsP/InP heterostructure was grown by low pressure MOCVD on 〈100〉 InP substrate. All layers were n-doped with silicon to a level of 1.0×1017 cm−3. The structures functioned in both planar as well as ridge waveguide configurations. Measurements were performed with both a YAG laser and a semiconductor laser in the pulsed as well as the cw regime and were compared with theoretical calculations, used in the design of the structure. Red light was detected even in a single slab InGaAsP waveguide with a cw semiconductor laser diode.