Accurate determination of effective quantum well thickness : infrared absorption by transverse-optical phonons

We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 Å. Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the trans...

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Veröffentlicht in:Applied physics letters 1992-08, Vol.61 (5), p.583-585
Hauptverfasser: YANG, M. J, WAGNER, R. J, SHANABROOK, B. V, MOORE, W. J, WATERMAN, J. R, TWIGG, M. E, FATEMI, M
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Sprache:eng
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Zusammenfassung:We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 Å. Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the transmission spectra by taking into account the complex dielectric functions with a transfer matrix formalism. The thickness of InAs quantum wells can be determined with monolayer resolution. High-resolution transmission electron microscopy shows clear lattice images in a region away from the AlSb/InAs interfaces. The thickness of the pure nonintermixed InAs region is in excellent agreement with our far infrared absorption results. Phonon absorption can therefore provide a nondestructive method to effectively determine the number of pure InAs monolayers, in spite of interdiffusion occurring at the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107844