Accurate determination of effective quantum well thickness : infrared absorption by transverse-optical phonons
We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 Å. Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the trans...
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Veröffentlicht in: | Applied physics letters 1992-08, Vol.61 (5), p.583-585 |
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Sprache: | eng |
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Zusammenfassung: | We have studied far infrared transmission spectra of various AlSb/InAs/AlSb single quantum wells, where the well width ranges from 60 to 200 Å. Because the quantum well is thin, the far infrared absorption due to transverse-optical phonons is not saturated. We obtained excellent fitting to the transmission spectra by taking into account the complex dielectric functions with a transfer matrix formalism. The thickness of InAs quantum wells can be determined with monolayer resolution. High-resolution transmission electron microscopy shows clear lattice images in a region away from the AlSb/InAs interfaces. The thickness of the pure nonintermixed InAs region is in excellent agreement with our far infrared absorption results. Phonon absorption can therefore provide a nondestructive method to effectively determine the number of pure InAs monolayers, in spite of interdiffusion occurring at the interface. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.107844 |