Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine-impurity-induced layer disordering

Restoration or removal of the light- and heavy-hole degeneracy of the exciton transitions for light polarized parallel to the layers in strained GaAs0.91P0.09/Al0.3Ga0.7As single quantum wells has been demonstrated by fluorine-impurity-induced layer disordering. Disordering due to As and P interdiffusion has also been observed at the quantum-well interfaces. For only a 15-min anneal at 750 °C, accumulation of P and a depletion of As at a distance of 0.05–0.1 μm beneath the surface is found to be closely associated with the redistribution of the implanted F in this region.