Low-frequency oscillations in semi-insulating InP

Low-frequency oscillations in semi-insulating InP

Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was...

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Veröffentlicht in:Applied physics letters 1992-06, Vol.60 (23), p.2906-2907
Hauptverfasser: BACKHOUSE, C, SAMUILOV, V. A, YOUNG, L
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Zusammenfassung:Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106815