Formation of TiN-encapsulated copper structures in a NH3 ambient

A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550 °C in a NH3 ambient. A fast heating rate (70 °C/min) to 550 °C can effectively suppress the formation of Cu3Ti and enhance the TiNx formation near the surface of the cop...

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Veröffentlicht in:	Applied physics letters 1992-06, Vol.60 (24), p.2983-2985
Hauptverfasser:	JIAN LI, MAYER, J. W, COLGAN, E. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550 °C in a NH3 ambient. A fast heating rate (70 °C/min) to 550 °C can effectively suppress the formation of Cu3Ti and enhance the TiNx formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106783